• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    In the case of an embossing lacquer based on a UV-polymerizable prepolymer composition containing at least one acrylate monomer, the prepolymer composition contains, in addition to the acrylate monomer, at least one thiol selected from the group consisting of 3-mercaptopropianates, mercaptoacetates, thioglycolates and alkylthiols and optionally a surface-active nonstick additive selected from the group consisting of nonionic Surfactants such as polyether siloxanes, fatty alcohol ethoxylates such as polyoxyethylene (9) lauryl ether, monofunctional alkyl (meth) acrylates, poly siloxane (meth) acrylates, as well as a method of embossing embossed lacquer coated substrate surfaces.
    公开号:AT516558A1
    申请号:T887/2014
    申请日:2014-12-10
    公开日:2016-06-15
    发明作者:
    申请人:Joanneum Res Forschungsgmbh；
    IPC主号:
    专利说明:

    The present invention relates to an embossing lacquer based on a UV-polymerizable prepolymer composition comprising at least one acrylate monomer, and a process for embossing substrate surfaces coated with an embossing lacquer based on a UV-polymerizable propylene composition comprising at least one acrylate monomer.
    Due to the rapid growth of nanotechnology in recent years, the production of nanostructured components in industrial manufacturing is becoming increasingly important, and such nanostructured components are usually produced from photopolymerizable prepolymer compositions. In particular, in the decor sector, product marketing and surface finishing of various materials, such. Films are increasingly being used to achieve certain additional functions, e.g. to create decorative visual effects. For this purpose, nanotechnologically prepared structures, which are made of special Präpolymerzusammensetzungen used.
    An even more important application of such micro- and nanostructured films is in electronic, optical, sensory and magnetic devices, such as integrated circuits, displays, micro-optics and the like, since small feature sizes are the deciding factor for the functionality of these elements and therefore exist intensive efforts in the field of large-scale printed electronics to manufacture components on film substrates. For industrial film production therefore micro- and nanostructuring techniques such as imprint technologies play an important role and always require new and improved moldable films or compositions from which such structured films can be produced.
    Industrial film refinement covers a very wide range, ranging from the improvement of mechanical or decorative surface properties to the integration of optical, sensory and electronic functionalities in the material film. A crucial criterion and at the same time a limiting component for the use of such production techniques, however, is the fact that products often have structures with dimensions in the lower micrometer or nanometer range, on the one hand because of the high integration density of their individual components, but also to the functionality of the structures in the To ensure the order of magnitude of the wavelength used and to increase the total surface area. Conventional mass printing methods such as gravure printing, flexographic printing, screen printing, offset printing and the like, although allow an extremely high throughput of several 100 m per minute, but do not usually provide the necessary structural resolution range available. The only currently known technique which makes it possible to produce structures with minimal dimensions in the nanometer range in a parallel process is the so-called nanoimprint lithography (NIL), which is a highly precise embossing process and with which it is possible even the smallest structures on the corresponding Form substrate.
    Nanoimprint lithography methods are industrially used to date mainly for the production of embossed holograms. For this purpose, similar processes are used in the nanoimprint lithography method, wherein the embossed structures represent a surface relief that acts as a diffraction grating. Decisive in such methods is that adhesion of the paint is avoided on embossing tool to subsequently achieve a defect-free demolding of the embossed article can. For a nanoimprint process, two different types of embossing tools are currently used. At present, such embossing tools made of silicon, quartz or nickel are used, whereby the production of such hard embossing tools is relatively complicated. There are therefore efforts to replace the hard dies by stamping of polymer materials, polymer materials potentially lower surface energies than silicon, quartz or nickel, which reduces the Lackanhaftung the embossing in the embossing process. However, they often have the disadvantage that they can be used only very limited as embossing dies in the submicrometer range and that cross-linked polymer materials do not harden sufficiently fast enough and thus their embossing fidelity is relatively low, so that a defect-free self-replication of the stamp in a stamping process with currently available Prägelacken not possible appears. For embossing, not only the complete reaction of the reactive C-C double bonds in the polymer stamp material before embossing is necessary because they otherwise react with the C-C double bonds in the embossing lacquer used, which inevitably leads to sticking of stamp and lacquer. However, especially with small structures, such as in the nanometer range, any sticking of the stamp and varnish or any incomplete detachment of the embossed structure from the tool must be avoided at all costs, since otherwise it will not be possible to mold with a required structural integrity and desired structures will not be such Form fidelity can be produced in order to use them industrially. For this purpose, the surface properties or interfacial energies between a substrate, the stamp and the embossing lacquer are crucial. Residue-free demolding only appears to be possible if the embossing lacquer shows a pronounced tendency to retract from the stamp surface during the nanoimprint process.
    The present invention now aims to provide a soluble embossing lacquer based on a UV-polymerizable prepolymer composition, with which it is possible to produce structures in the nanometer range and which are free from irregularities. The invention further aims to provide a method for embossing substrate surfaces coated with such an embossing lacquer, with which
    Method it is possible to produce selbstabformbare structures in the nanometer range of the embossing lacquer, which have a high Imformtreue and make it possible to produce defect-free nanostructures ren in a continuous nanoimprint lithography process.
    To achieve this object, an embossing lacquer according to the invention is essentially characterized in that the prepolymer composition comprises, in addition to the acrylate monomers, at least one thiol selected from the group consisting of 3-mercaptopropionates, mercaptoacetates, thio-glycolates and alkylthiols and optionally a surface-active nonstick additive selected from the group consisting of ionic surfactants, such as polyether siloxanes, fatty alcohol ethoxylates, such as polyoxyethylene (9) lauryl ether, monofunctional alkyl (meth) acrylates, poly-siloxane (meth) acrylates, perfluoroalkyl (meth) acrylates, and Perfluoropolyether (meth) acrylates, as well as a photoinitiator contains. In accordance with the invention, in addition to the acrylate monomers, according to the invention, the prepolymer composition contains at least one thiol selected from the group consisting of 3-mercaptopropionates, mercaptoacetates, thioglycolates and alkylthiols, in the absence of O 2 exclusion during the polymerization, resulting peroxyradical hydrogens will abstract from the thiol groups to form thionyl radicals which are thionyl radicals in turn add to the carbon-carbon double bonds and start a polyaddition reaction, thereby preventing the chain termination and the reaction rate is significantly increased and in particular the UV polymerization continues rapidly, which leads to an overall increase in the rate of polymerization. The thiol addition causes increased chain transfer in the radical polymerization or allows a parallel polyaddition reaction, whereby it is possible to stimulate the simultaneous growth of many reaction centers, which in turn leads to lower molecular weights or polymer chain lengths and thus improved solubility of the polymers formed therefrom.
    Through the use of the thiol, in particular, the shrinkage inevitably occurring during the polymerization takes place already in the liquid state of the UV-polymerizable prepolymer composition, whereby in an embossing process, in particular UV embossing process, the reproducibility compared to conventional materials is significantly improved and, in particular, the shrinkage affecting the embossing fidelity is significantly reduced compared to conventional UV embossing polymers. In this use of a surface-active release adhesive, the adhesion energy, i. the adhesion between the embossing lacquer and a shim or stamp during a subsequent use significantly reduced, which allows a residue-free separation or a residue-free dissolution of the two materials.
    The embossing lacquer according to the invention has a particularly low viscosity, which allows the rapid filling of cavities in the embossing tool and allows the impression of nanostructures. The surface energy and / or the interfacial energies of the embossing lacquer can be controlled by the addition of surface-active additives and thus also the wetting behavior of the embossing lacquer. »W w w -¾ v w -m 9 9
    The embossing lacquer according to the invention in this case enables a direct lift-off structuring of layers deposited in a second step, since the embossing lacquer can be completely removed so that no residual lacquer layer remains between the sacrificial lacquer structures on the substrate foil. It is therefore unnecessary when using the embossing lacquer a residual paint removal, for example, by a time-consuming 02 plasma etching.
    By, as corresponds to a development of the invention, the embossing lacquer is formed so that acrylate is selected from the group acryloylmorpholine (ACMO) or isobornyl acrylate (IBOA), is used as the acrylate monomer is an extremely small, mobile, reactive monomer, whereby the total polymerization rate can be greatly increased and a particularly rapid curing and thus a high Imformtreue the embossing lacquer can be ensured.
    In order to keep the degree of polymerization of the embossing lacquer-forming composition as low as possible during UV embossing / solidification and thus to maximize the solubility or dissolution rate, the embossing lacquer according to the invention is developed in such a way that the thiol is added in an amount between 0.5 and 20 wt. -% of the prepolymer composition is included. With such a development, it is possible to minimize the shrinkage which occurs during the polymerization and adversely affects the fidelity.
    In particular, in order to minimize or completely prevent adhesion of the embossing lacquer during or after the UV polymerization of the prepolymer composition forming it to surfaces, such as, for example, a nickel shim surface, the invention is developed in such a way that the surface-active anti-adhesion additive silicone-containing or fluorine-containing additive selected from the group of nonionic surfactants such as polyether siloxanes, fatty alcohol ethoxylates such as polyoxyethylene (9) lauryl ether, monofunctional polydimethylsiloxane (meth) acrylates, perfluoro-n-alkyl (meth) acrylates or perfluoropolyether (meth) acrylates, which is contained in particular in an amount of 0.1 to 3 wt .-%. Silicone-containing or fluorine-containing additives contribute to the reduction of the adhesion and to facilitate the detachment of the embossing lacquer formed from the prepolymer composition from the embossing tool, wherein in particular the perfluorinated additives have proved to be particularly favorable and reliably enable a plurality of impressions of a pattern.
    By, as corresponds to a development of the invention, contained in the embossing lacquer prepolymer composition contained photoinitiator from the group of thio-xanthones, Ketosulphone, (alkyl) benzoyl-phenyl-phosphine oxides, 1-hydroxyalkyl phenyl ketones or 2,2-dimethoxy-1 , 2-diphenylethan-1-one, it is possible to initiate the polymerization effectively.
    By, as corresponds to a development of the invention, the photoinitiator in an amount of 0.1 to 10 wt .-%, in particular 0.5 to 5 wt .-%, the polymerization rate of the embossing lacquer-forming composition can be controlled in a targeted manner , In general, it should be noted that the higher the concentration of the photoinitiator, the greater the rate of polymerization in the thin films used, so that in particular an amount of 0.5 to 5 wt .-% of the photoinitiator for a polymerization according to the inventive use has proved to be advantageous.
    In order to form an embossing lacquer which in particular has a high polymerization rate and which has a low degree of polymerization, the invention is developed in such a way that the thiol is prepared from a mono- or dithiol of the group: octanethiol, 1,8-octanedithiol, decanethiol, 1,10-decanedithiol , Dodecanethiol, 1,12-dodecanedithiol, 2-ethylhexylmercapoacetate, 2-ethylhexyl-3-mercaptopropionate, 2-ethylhexyl thioglycolate, glycol di (3-mercaptoproprionate), golkoldi (mercaptoacetate), glyceryl dimercaptoacetate or glyceryl di (3-mercaptopropio -nat) is selected.
    In order to ensure a residue-free embossing of the embossing lacquer, the invention is developed in such a way that the prepolymer composition has a viscosity of between 10 and 100 mPas.
    The invention further relates to a method of embossing substrate surface coated with an embossing lacquer according to the invention, it being apparent in the present case that the method according to the invention can be performed in a great variety of ways without the result being changed according to the invention. The object of such a method is to form or produce nanostructured surfaces or structures and to mold these structures a plurality of times using a common molding method or imprinting method.
    To solve this problem, the method according to the invention is essentially characterized by the steps: a) applying a layer of the embossing lacquer to a carrier, b) UV-structuring the embossing lacquer, c) optionally applying at least one further layer to be structured selected from a metal, Dielectric and / or dielectric layer, d) detachment of the embossing lacquer remaining after structuring in step b) optionally with additives selected from dilute acids having pH values in the range from 1 to 6, dilute alkalis having pH values in the range from 8 to 13 or surfactant-containing water or propylene glycol monomethyl ether acetate (PGMEA), N-methyl-2-pyrrolidone (NMP), methyl ethyl ketone (MEK) or acetone.
    By carrying out the first two steps of the method according to the invention, it is possible to produce a nanostructured lacquer layer as a sacrificial layer, which can either be metallized or covered with another layer and subsequently the remaining structures of the embossing lacquer by means of water or organic solvents, such as PGMEA can be replaced. It is preferable to such a method that the ACMO-based embossing varnish is soluble in water, dilute acids or alkalis or specific solvents, so that the use of toxic or highly corrosive chemicals can be avoided at all costs and further with such a method a nano Structure can be formed over a large area.
    In order to achieve an exactly reproducible structuring of the surface of the embossing lacquer or to achieve an exact structuring of the metallized surfaces thereof, the process according to the invention is essentially carried out so that the UV structuring of the embossing lacquer is carried out with a UV nanoimprint lithography process.
    By, as corresponds to a development of the invention, the further layer to be structured of metals such as nickel, aluminum, chromium or titanium, conjugated organic semiconductors such as pentacene, C60, thiophenes, DNTT; P3HT, phthalocyanines, H-bonded organic semiconductors such as indigo and indigo derivatives, and quinacridone and anthraquinone, inorganic semiconductors such as ZnO, SnO, InGaZnO or dielectrics selected from poly-norbornene, ormocers, cellulose, PVCi, BCB, PMMA, shellac, polyimide, cytop, PVDF, PVDF-TrFE, polystyrenes, Al 2 O 3, ZrO 2, SiO 2, SiON. Apply S13N4 as well as combinations thereof with which layers a defect-free detachment can be achieved.
    Particularly good results can be achieved by carrying out the process in such a way that the further metal, semiconductor and / or dielectric layer to be structured is applied with a layer thickness between 5 nm and 500 nm, the thickness of the layer to be structured being smaller than 1 /. 3 of the structured should be.
    The removal of the remaining paint layer, which is normally necessary after NIL embossing processes, by means of an etching step is rendered obsolete because of the freedom of the described UV embossing process.
    By, as corresponds to a development of the invention, the detachment of the remaining after structuring embossing, by immersion in a solvent bath or by spraying, optionally with additional mechanical aids, such as brushes or ultrasound, is carried out, an easy to perform, environmentally friendly To provide methods by which any residues of the embossing lacquer can be removed without residue. With such a procedure and using the above-mentioned embossing it is possible to avoid any oxygen plasma etching (RIE method).
    The invention will be explained in more detail with reference to examples shown in the drawings and exemplary embodiments. In these show:
    1 shows a schematic representation of a residue-free embossing by dewetting the UV embossing lacquer,
    2 is a raster electron representation of a residuum-free UV-NIL embossing of a PET film, and
    Fig. 3 is a schematic representation of the lift-off principle based on a lift-off-enabled embossing lacquer according to the invention as a sacrificial layer, and
    4 shows four scanning electron micrographs of line or grid structures, which were produced with an embossing lacquer according to the present invention.
    FIG. 1 shows that a substrate 1 is coated with an acrylate-based UV resist 2, which also contains surface-active substances. As the die 3 approaches, due to the wetting properties of the resist 2, the spreading coefficient, i. the interfacial energy between substrate 1 and die 3 minus the interfacial energy between substrate 1 and resist 2 and between resist 2 and die 3 is negative, causing the resist 2 to retract between the stamp surface and substrate 1, as shown in FIG UV embossing lacquer after removal of the embossing punch 3 shows which embossing lacquer 2 has a gap 4 corresponding to the punch 3.
    By virtue of such residual-free UV-NIL embossing, the oxygen-plasma etching step (RIE) generally required in the nanoim print lithography process is unnecessary on the substrate 1 for removing residual paint layers, as shown in FIG. 2. 2 clearly shows that there is no residue of the embossing lacquer 2 on the substrate foil 1, which is coated with embossing lacquer 2, where the embossing punch 3 has led to the wetting of the UV resist on the substrate.
    In Fig. 3, the sequence of process steps of a lift-off process is shown schematically.
    In Fig. 3a, a sacrificial layer, e.g. a photoresist 2 applied. In Fig. 3b it can be seen that the sacrificial layer 2 has been patterned in the present case with a negative side wall angle.
    In Fig. 3c, the entire surface of both the exposed substrate 1 and the remaining sacrificial layer 2 is covered with a target material, such as aluminum 5.
    FIG. 3d schematically shows the dissolution of the sacrificial layer or of the resist 2 in a wet-chemical process, in this case in water. The sacrificial layer 2 dissolves in water 6 and all areas of the substrate 1 on which a sacrificial layer 2 has remained in the preceding steps are exposed by the sacrificial layer 2 and together with the sacrificial layer 2 becomes the target material 5 located above the sacrificial layer 2 removed or removed, so that substrate 1 with the deposited target material 5 remains. After drying the substrate 1, the structured target material 5 is ready for further use on the substrate 1, as shown in Fig. 3e.
    FIG. 4 shows images of structured target materials 5, these being scanning electron micrographs in which aluminum was used as a structured target material. The obtained line width is 400 nm. From the photo graphs of the scanning electron microscope it can be seen that sharp structures of the line pattern can be achieved with the embossing lacquer according to the invention or the method for embossing and that no residues of the resist layer remain on the surface of the structures.
    Example 1 :
    Preparation of an embossing lacquer according to the invention 84% acryloylmorpholine (ACMO), 10% 2-ethylhexyl thioglycolate, 5% 2-hydroxy-2-methyl-1-phenyl-propan-1-one as photoinitiator and 1% polysiloxane surfactant are based on a 50th The thickness of the gravure roll is 1.6 ml / m2, which corresponds to approximately 0.8 μm wet film thickness, and is provided with a nickel embossing tool with protruding embossing structures of 5 μm structure width and 1 μm structure height with a web speed characterized by 10 m / min. The pneumatic pressure at the counter roll is 4 bar. The UV polymerization was carried out by irradiation with a medium-pressure Hg medium-pressure lamp at 100 W / cm.
    Example 2
    Preparation of an embossing lacquer according to the invention 84% IOBA, 10% 2-glycol di (3-mercaptopropional), 5% 2-hydroxy-2-methyl-1-phenyl-propan-1-one as photoinitiator and 1% 1H, 1H, 2H , 2H-perfluorooctyl acrylate are applied to a 50 pm thick PET film by gravure, wherein the well volume of the intaglio roll is 1.6 ml / m2, which corresponds to about 0.8 pm wet film thickness and are with a nickel embossing tool with protruding embossed structures with 5 pm Structure width and 1 pm structure height with a web speed of 10 m / min coined. The pneumatic pressure at the counter roll is 4 bar. The UV polymerization was carried out by irradiation with a medium-pressure Hg medium-pressure lamp at 100 W / cm.
    Example 3
    Preparation of an Embossing Lacquer According to the Invention 84% of acryloylmorpholine (ACMO), 10% of dodecanethiol, 5% of ethyl (2,4-trimethylbenzoyl) phenylphosphinate as photoinitiator and 1% of 1H, 1H, 2H, 2H-perfluorooctylacetate become 50 μm thick The PET sheet is applied by gravure printing, wherein the cup volume of the gravure roll is 1.6 ml / m2, which corresponds to a 0.8 μm wet film thickness, and are coated with a nickel embossing tool with protruding embossing structures with 5 μm structure width and 1 μm structure height with a web speed of 10 m / min embossed. The pneumatic pressure at the counter roll is 4.2 bar. The UV polymerization was carried out by irradiation with a Hg medium-pressure lamp at 100 W / cm.
    Example 4
    Preparation of an embossing lacquer according to the invention 84% of IBOA, 10% of 2-ethylhexyl thioglycolate, 5% of ethyl (2,4-trimethylbenzoyl) phenylphosphate as photoinitiator and 1% of gemini siloxane surfactant are applied to a 50 μm PET film Gravure applied, wherein the cup volume of the gravure roll is 1.6 ml / m2, which corresponds to a 0.8 pm wet film thickness and are embossed with a nickel embossing tool with protruding embossed structures with 5 pm structure width and 1 pm structure height with a web speed of 10 m / min. The pneumatic pressure at the counter roll is 3.8 bar. The UV crosslinking was carried out by irradiation with a Hg medium-pressure steam lamp at 100 W / cm.
    Example 5
    The structures prepared according to Example 1 are metallized by vapor deposition of 30 nm nickel and after metallizing the embossing lacquer structures by placing the metallized film in a water bath and heating to temperatures of 40 ° C and using additional measures such as ultrasound, spraying, brushing , etc. replaced. In such a treatment, the embossing lacquer which is water-soluble is dissolved, and simultaneously with the embossing lacquer, the metal layer located above the embossing lacquer is peeled off, while the metal layer regions located directly on the foil regions exposed in the previous embossing step remain on the foil. So remains after the lift-off process only a negative metal structure of the embossed paint structure left.
    Example 6
    The structures prepared according to Example 3 are metallized by vapor deposition of 30 nm aluminum and after metallization, the excess structures of the embossing lacquer are removed by applying ultrasound in a water bath. In such a treatment, the water-soluble embossing lacquer is dissolved and simultaneously with the embossing lacquer the metal layer located above the embossing lacquer is peeled off, so that after the lift-off process only a negative profile of the embossed profile remains, which consists exclusively of a metal structure.
    Example 7
    The structures thus prepared are metallized by vapor deposition of 30 nm of chromium, and after metallization, the excess structures of the embossing lacquer are prepared by introducing the metallized structure into a water bath and heating to temperatures of 60 ° C. by spraying and pressure by applying ultrasound and applying Additional measures, such as vibration, brushes, etc. replaced. In such a treatment, the embossing lacquer, which is water-soluble, is dissolved and simultaneously with the embossing lacquer the metal layer located above the embossing lacquer is peeled off so that after the lift-off process only a negative profile of the embossed profile remains, which exclusively consists of a metal structure exists.
    Example 8
    The structures prepared according to Example 2 are metallized by vapor deposition of 30 nm aluminum and, after metallization, the excess structures of the embossing lacquer are prepared by introducing the metallized structure into propylene glycol monomethyl ether acetate (PGMEA) and heating to temperatures of 50 ° C. using additional measures, such as vibrating, brushing, etc. replaced. In such a treatment, the solvent-soluble embossing lacquer is dissolved and simultaneously with the embossing lacquer the metal layer located above the embossing lacquer is peeled off, so that after the lift-off process only a negative profile of the embossed profile remains, which exclusively consists of a metal structure consists.
    Example 9
    The structures prepared according to Example 4 are coated by vapor deposition of 30 nm P3HT and after coating, the excess structures of the embossing lacquer are removed by introducing the coated structure into a water bath and heating to temperatures of 50 ° C or by spraying the water and pressure. In such a treatment, the embossing lacquer is released and simultaneously with the embossing lacquer the semiconductor layer located above the embossing lacquer is peeled off, so that after the lift-off process only a negative profile of the embossed profile remains, which consists exclusively of an organic semiconductor structure.
    Example 10
    The structures prepared according to Example 4 are coated by vapor deposition with 30 nm ZnO and after coating, the excess structures of the embossing lacquer are dissolved by introducing the coated structure in propylene glycol monomethyl ether acetate (PGMEA) and heating to temperatures of 50 ° C or by spraying the solvent and pressure , In such a treatment, the embossing lacquer is released and simultaneously with the embossing lacquer the semiconductor layer located above the embossing lacquer is peeled off, so that after the lift-off process only a negative profile of the embossed profile remains, which consists exclusively of an inorganic semiconductor structure.
    权利要求:
    Claims (14)
    [1]
    claims:
    1. embossing lacquer based on a UV-polymerizable prepolymer composition containing at least one acrylate monomer, characterized in that the prepolymer composition in addition to the acrylate at least one thiol selected from the group: 3-mercaptopropionates, mercaptoacetates, thioglycolates and alkylthiols and optionally a surface-active release agent selected from Group of nonionic surfactants such as polyether siloxanes, fatty alcohol ethoxylates such as polyoxyethylene (9) lauryl ether, monofunctional alkyl (meth) acrylates, poly siloxane (meth) acrylates, perfluoroalkyl (meth) acrylates and perfluoropolyether (meth) acrylates, as well as a photoinitiator.
    [2]
    2. embossing lacquer according to claim 1, characterized in that acrylate is selected from acryloylmorpholine (ACMO) or isobornyl acrylate (IBOA).
    [3]
    3. embossing lacquer according to claim 1 or 2, characterized in that the thiol is contained in an amount between 0.5 and 20 wt .-% of prepolymer composition.
    [4]
    4. embossing lacquer according to claim 1, 2 or 3, characterized in that the surface-active release agent is a silicone-containing or fluorine-containing additive selected from the group of nonionic surfactants such as polyether siloxanes, fatty alcohol ethoxylates such as polyoxyethylene (9) lauryl ether, monofunctional polydimethylsiloxane - (meth) acrylates, perfluoro-n-alkyl (meth) acrylates or perfluoropolyether (meth) acrylates.
    [5]
    5. embossing lacquer according to claim 4, characterized in that the surface-active release agent is contained in an amount of 0.1 wt .-% to 3 wt .-%.
    [6]
    6. embossing lacquer according to one of claims 1 to 5, characterized in that the photoinitiator from the group of thioxanthones, ketosulphone, (alkyl) benzoyl-phenyl-phosphine oxides, 1-hydroxyalkyl phenyl ketones or 2,2-dimethoxy-1,2 -diphenylethan-1-one is selected.
    [7]
    7. embossing lacquer according to claim 6, characterized in that the photoinitiator in an amount of 0.1 to 10 wt .-%, in particular 0.5 to 5 wt .-% is included.
    [8]
    8. embossing lacquer according to one of claims 1 to 7, characterized in that the thiol from a mono- or dithiol of the group: octanethiol, 1,8-octanedithiol, decanethiol, 1,10-decanedithiol, dodecanethiol, 1,12-dodecanedithiol, 2-ethylhexylmercaptoacetate, 2-ethylhexyl-3-mercaptopropionate, 2-ethylhexyl thioglycolate, glycol di (3-mercaptoproprionate), Gykoldi (mercaptoacetate), glyceryl dimercaptoacetate or glyceryl di (3-mercaptopropionate).
    [9]
    9. embossing lacquer according to one of claims 1 to 8, characterized in that the prepolymer composition has a viscosity between 10 and 100mPas.
    [10]
    10. A method for embossing coated with an embossing lacquer according to any one of claims 1 to 9 substrate surfaces, characterized by the following steps: a) applying a layer of the embossing lacquer on a support, b) UV structuring of the embossing lacquer, c) optionally applying at least a further layer to be structured selected from a metal, semiconductor and / or dielectric layer, d) detachment of the embossing lacquer remaining after structuring with, if appropriate, additives selected from dilute acids with pH values in the range from 1 to 6, dilute alkalis with pH Values ranging from 8 to 13 or surfactant-containing water or propylene glycol monomethyl ether acetate (PGMEA), N-methyl-2-pyrrolidone (NMP), methyl ethyl ketone (MEK) or acetone.
    [11]
    11. The method according to claim 10, characterized in that the UV structuring of the embossing lacquer is carried out with a UV nanoimprint lithography process.
    [12]
    12. The method according to claim 10 or 11, characterized in that the further to be structured metal, semiconductor and / or dielectric layer is applied with a layer thickness between 5 nm and 500 nm.
    [13]
    13. The method according to claim 10, 11 or 12, characterized in that the further layer to be structured of metals such as nickel, aluminum, chromium or titanium, conjugated organic semiconductors such as pentacene, C60, thiophenes, DNTT; P3HT, phthalocyanines, H-bonded organic semiconductors, such as indigo and indigo derivatives, and quinacridone and anthraquinone, inorganic semiconductors such as ZnO, SnO, InGaZnO or dielectrics, selected from polynorbornene, ormocers, cellulose, PVCi, BCB, PMMA, shellac, Polyimide, cytop, PVDF, PVDF-TrFE, polystyrenes, Al 2 O 3, ZrO 2, SiO 2, SiON. S13N4 and combinations thereof, is selected.
    [14]
    14. The method according to any one of claims 10 to 13, characterized in that the detachment of the remaining after patterning embossing, by immersion in a solvent bath or by spraying, optionally with additional mechanical aids, such as brushes or ultrasound, is performed. Vienna, Joanneum Re ^ eäfch Forschungsefesellschaft mbH by: CUNOW PatentanwaitrKG
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    DE112011104571T5|2013-09-26|A method for forming a fine pattern in a wide area using laser interference lithography, method for non-planar transfer of the fine pattern formed by the method and article to which the fine pattern is transferred by the transfer method
    US10752718B2|2020-08-25|Photocurable resin composition and method of forming patterns using the same
    CN105242493A|2016-01-13|Ultraviolet-cured nano-imprinting lithography glue and preparation method thereof
    DE102013111372B4|2016-06-30|Method for producing a surface-structured article
    EP2246740B1|2011-12-28|Method for structuring a silicone layer
    WO2015188909A1|2015-12-17|Methods for producing a stamping tool by means of 3-d lithography
    KR101050892B1|2011-07-20|Fluorine-based composition for surface coating of elastomer mold, coating method using the composition, and elastomer mold produced by the coating method
    DE102014100005A1|2014-12-04|Coating of resist on a substrate for ultra-high resolution lithography
    WO2009037032A1|2009-03-26|Method for the lithographic production of nanostructures and/or microstructures, stamp and substrate
    同族专利:
    公开号 | 公开日
    EP3230795A1|2017-10-18|
    HK1244067B|2020-02-28|
    US20170343900A1|2017-11-30|
    JP6967969B2|2021-11-17|
    JP2018506863A|2018-03-08|
    CN107209454B|2021-02-02|
    WO2016090394A1|2016-06-16|
    AT516558B1|2018-02-15|
    CN107209454A|2017-09-26|
    DK3230795T3|2019-07-15|
    US10809622B2|2020-10-20|
    KR20170093940A|2017-08-16|
    EP3230795B1|2019-06-05|
    ES2744336T3|2020-02-24|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    KR20080028786A|2006-09-27|2008-04-01|후지필름 가부시키가이샤|Curable composition for optical nanoimprint lithography and pattern forming method using the same|
    EP2244281A1|2008-02-12|2010-10-27|FUJIFILM Corporation|Curable composition for nanoimprint and pattern-forming method|
    EP2286980A1|2008-06-05|2011-02-23|Asahi Glass Company, Limited|Mold for nanoimprinting, process for producing the same, and processes for producing molded resin having fine rugged structure on surface and for producing wire-grid polarizer|
    WO2013174522A1|2012-05-25|2013-11-28|Micro Resist Technology Gesellschaft Für Chemische Materialien Spezieller Photoresistsysteme Mbh|Composition suitable for use as a release-optimized material for nanoimprint processes and uses thereof|
    JP2014074082A|2012-10-02|2014-04-24|Three Bond Co Ltd|Photocurable resin composition|
    DE2834768A1|1977-08-23|1979-03-08|Grace W R & Co|METHOD FOR MANUFACTURING A PRINTING PLATE AND CONTAINING HARDABLE POLYMER COMPOSITION|
    CA1172112A|1980-12-12|1984-08-07|Richard P. Plunkett|Process for making conductive coatings|
    JP4414188B2|2003-09-30|2010-02-10|大日本印刷株式会社|Laminate with improved hard coat layer slipperiness|
    US8076386B2|2004-02-23|2011-12-13|Molecular Imprints, Inc.|Materials for imprint lithography|
    US20060216524A1|2005-03-23|2006-09-28|3M Innovative Properties Company|Perfluoropolyether urethane additives having acryl groups and hard coats|
    US7939176B2|2005-12-23|2011-05-10|Xerox Corporation|Coated substrates and method of coating|
    US20080176049A1|2007-01-24|2008-07-24|Samsung Electronics Co., Ltd.|PHOTO-CURABLE COMPOSITION HAVING INHERENTLY EXCELLENT RELEASING PROPERtY AND PATTERN TRANSFER PROPERTY, METHOD FOR TRANSFERRING PATTERN USING THE COMPOSITION AND LIGHT RECORDING MEDIUM HAVING POLYMER PATTERN LAYER PRODUCED USING THE COMPOSITION|
    DE102007007914A1|2007-02-14|2008-08-21|Giesecke & Devrient Gmbh|Embossing lacquer for micro-optical safety elements|
    DE102008027952A1|2008-06-12|2009-12-17|Giesecke & Devrient Gmbh|Security element with screened layer of raster elements|
    US20100109195A1|2008-11-05|2010-05-06|Molecular Imprints, Inc.|Release agent partition control in imprint lithography|
    US20110281025A1|2009-01-29|2011-11-17|Showa Denko K.K.|Curable composition for transfer materials, and acryloyl group-containing urea compound|
    US20120100369A1|2009-05-12|2012-04-26|Daikin Industries, Ltd.|Transfer sheet and process for producing same|
    JP6029506B2|2013-03-26|2016-11-24|富士フイルム株式会社|Composition for forming underlayer film for imprint and pattern forming method|
    JP2015071741A|2013-09-04|2015-04-16|Jsr株式会社|Curable composition, nano imprint material, cured film, laminate, method of producing cured film, pattern formation method, and semiconductor light-emitting element substrate|TW201942143A|2018-03-27|2019-11-01|日商富士軟片股份有限公司|Curable composition for imprinting, release agent, cured object, pattern formation method, and lithography method|
    AT521567A2|2018-07-20|2020-02-15|Hueck Folien Gmbh|Security element with tamper evidence|
    DE102018005872A1|2018-07-25|2020-01-30|Giesecke+Devrient Currency Technology Gmbh|Use of a radiation-curable lacquer composition, method for producing micro-optical structures, micro-optical structure and data carrier|
    DE102019107090A1|2019-03-20|2020-09-24|Joanneum Research Forschungsgesellschaft Mbh|Microstructure with thermoplastic embossing lacquer layer and manufacturing process|
    CN113156765A|2020-01-07|2021-07-23|北京化工大学|Photoresist composition for ultraviolet nano-imprinting and preparation and application thereof|
    AT523393B1|2020-04-06|2021-08-15|Hueck Folien Gmbh|Process for the production of a security element with a colored microstructure|
    CN111847989A|2020-07-16|2020-10-30|广东福莱特建筑材料有限公司|Multi-composite modified hydrophobic stone-like paint and preparation method thereof|
    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
    ATA887/2014A|AT516558B1|2014-12-10|2014-12-10|Embossing lacquer, embossing method and substrate surface coated with the embossing lacquer|ATA887/2014A| AT516558B1|2014-12-10|2014-12-10|Embossing lacquer, embossing method and substrate surface coated with the embossing lacquer|
    CN201580075898.1A| CN107209454B|2014-12-10|2015-12-09|Embossing lacquer and embossing method and substrate surface coated with said embossing lacquer|
    DK15817053.0T| DK3230795T3|2014-12-10|2015-12-09|PRACTICE AND PROCEDURE FOR BREAKING|
    KR1020177018941A| KR20170093940A|2014-12-10|2015-12-09|Embossing lacquer and method for embossing, and substrate surface coated with the embossing lacquer|
    JP2017549554A| JP6967969B2|2014-12-10|2015-12-09|Embossed lacquer, embossing method, and substrate surface coated with embossed lacquer|
    ES15817053T| ES2744336T3|2014-12-10|2015-12-09|Stamping lacquer and stamping procedure|
    US15/534,357| US10809622B2|2014-12-10|2015-12-09|Embossing lacquer and method for embossing, and substrate surface coated with the embossing lacquer|
    PCT/AT2015/000156| WO2016090394A1|2014-12-10|2015-12-09|Embossing lacquer and method for embossing, and substrate surface coated with the embossing lacquer|
    EP15817053.0A| EP3230795B1|2014-12-10|2015-12-09|Embossing lacquer and method for embossing|
    HK18103665.8A| HK1244067B|2014-12-10|2018-03-16|Embossing lacquer and method for embossing|
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